Real-time resistive switching of Cu/MoOx ReRAM observed in transmission electron microscope

Inner-structural changes of a Cu/MoOx ReRAM was observed by in-situ TEM during the resistive switching. We succeeded for the first time to observe the structure changes in the continuous multiple resistive switching cycles. Cu-rich filament was formed in the MoOx layer during the SET process with positive voltage to the Cu electrode, and disappeared by negative voltage in the RESET process. It was also confirmed that thick filaments were generated when the current compliance for the SET process was increased. The most meaningful phenomenon is that the position of the filament changed at each SET process.