• DocumentCode
    3706321
  • Title

    Fabrication and characterization of 3D fin-channel MANOS type flash memory

  • Author

    Y. X. Liu;T. Nabatame;T. Matsukawa;K. Endo;S. O´uchi;J. Tsukada;H. Yamauchi;Y. Ishikawa;W. Mizubayashi;Y. Morita;S. Migita;H. Ota;T. Chikyow;M. Masahara

  • Author_Institution
    National Institute of Advanced Industrial Science and Technology (AIST)
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The 3D fin-channel charge-trapping (CT) type flash memories with a high-k Al2O3 blocking layer (MANOS) have successfully been fabricated by scaling down Lg to 22 nm, and their electrical characteristics including variability of threshold voltage (Vt), endurance and retention characteristics have systematically been investigated. Thanks to the high-k effect of an Al2O3 blocking layer, it was found that the better short-channel effect (SCE) immunity and a larger memory window are obtained in the fabricated MANOS type flash memories than the MONOS ones with a SiO2 blocking layer.
  • Keywords
    "Three-dimensional displays","Flash memories","Logic gates","Aluminum oxide","High K dielectric materials","Fabrication","Yttrium"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348559
  • Filename
    7348559
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706321