Fabrication and characterization of 3D fin-channel MANOS type flash memory

The 3D fin-channel charge-trapping (CT) type flash memories with a high-k Al₂O₃ blocking layer (MANOS) have successfully been fabricated by scaling down L_g to 22 nm, and their electrical characteristics including variability of threshold voltage (V_t), endurance and retention characteristics have systematically been investigated. Thanks to the high-k effect of an Al₂O₃ blocking layer, it was found that the better short-channel effect (SCE) immunity and a larger memory window are obtained in the fabricated MANOS type flash memories than the MONOS ones with a SiO₂ blocking layer.