• DocumentCode
    3706326
  • Title

    A silicon single-electron pump with tunable electrostatic confinement

  • Author

    A. Rossi;T. Tanttu;K. Y. Tan;R. Zhao;K. W. Chan;I. Iisakka;G. C. Tettamanzi;S. Rogge;A. S. Dzurak;M. Möttönen

  • Author_Institution
    School of Electrical Engineering &
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the stability of the pumping mechanisms can be dramatically enhanced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million (ppm).
  • Keywords
    "Logic gates","Silicon","Quantum dots","Electrostatics","Standards","Uncertainty","Electric potential"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348563
  • Filename
    7348563