Inelastic quantum transport in single dopant nanowire transistors

In this work, quantum transport simulations are performed via a three dimensional real-space nonequilibrium Green´s function (NEGF) approach. Both acoustic and optical-phonon interactions are tackled within the self-consistent Born approximation [5], which represents one of the most suited model to include scattering in nano-devices. Based on this approach, we investigate the influence of phonon interactions on electron transport through the single dopant nanowire transistor sketched in Fig. 1.