• DocumentCode
    3706331
  • Title

    The effect of interfacial oxide and high-κ thickness on NMOS Vth shift from plasma-induced damage

  • Author

    Chih-Yang Chang;Jie Zhou;Chi-Nung Ni;Osbert Chan;Shiyu Sun;Wesley Suen;Sherry Mings;Malcolm Bevan;Patricia M. Liu;Peter Hsieh;Chorng-Ping Chang;Raymond Hung

  • Author_Institution
    Silicon Systems Group, Applied Materials, Inc., Santa Clara, CA 95054
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Different thicknesses of interfacial oxide and high-κ were used to study the effects of plasma-induced damage (PID) in NMOS transistors. The thickness of high-κ HfO2 was varied from 15Å to 25Å. The thickness of the interfacial layer (IL) with N2O/H2 was also varied from 5Å to 10Å. The threshold voltage (Vth) shift was observed to be greater in the thinner oxide using the same plasma condition. There was no significant effect with different IL thickness between 5Å and 10Å.
  • Keywords
    "Hafnium compounds","Plasmas","MOSFET","Dielectrics","Logic gates","Antennas","Reliability"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348568
  • Filename
    7348568
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706331