Title :
Electron transport in double-donor systems at Si/SiO2 Interface in SOI-FETs
Author :
Arup Samanta;Daniel Moraru;Takeshi Mizuno;Michiharu Tabe
Author_Institution :
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
fDate :
6/1/2014 12:00:00 AM
Abstract :
In this report, we will show the manipulation of donor electronic wave function by applying an electric field across an ultrathin Si channel. Most importantly, we find a sudden change in the transport path in the interface well due to merging of two donor-induced quantum wells formed at the Si/SiO2 interface. This finding represents an important step toward the control of electron transport in double-donor systems.
Keywords :
"Electric fields","Wave functions","Merging","Silicon","Quantum dots","Transistors","Quantum computing"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348571
