Title :
Back biases and positive bias temperature instability on low and high doped ultrathin body and buried oxide siliocn-on-insulator
Author :
Wen-Teng Chang;Sheng-Ting Shih; Chien-Hung; Yeh;Wen-Kuan Yeh
Author_Institution :
Department of Electrical Engineering, National University of Kaohsiung, Taiwan
fDate :
6/1/2014 12:00:00 AM
Abstract :
This study addresses low- and high-doped ultra-thin body and buried oxide silicon-on-insulator (UTBB-SOI) nFETs related to back biases and reliability. The low-doped device shows wider tuning range and lower subthreshold and gate leakage despite lower transconductance. Positive bias temperature instability in low-doped UTBB-SOI degraded lower than that in high-doped device.
Keywords :
"Logic gates","Stress","Doping","Gate leakage","Transconductance","Transistors"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348578
