• DocumentCode
    3706343
  • Title

    Charge sensing of two isolated double quantum dots

  • Author

    Tsung-Yeh Yang;Samaresh Das;Thierry Ferrus;Aleksey Andreev;David A. Williams

  • Author_Institution
    Hitachi Cambridge Laboratory, Hitachi Europe Ltd., Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the charge sensing of two isolated double quantum dots (IDQDs) at 4.2 K. The structure is fabricated through trench isolation of highly doped n-type silicon on silicon-on-insulator wafer. Each device contains one pair of IDQDs and one single electron transistor (SET) which serves as an electrometer. We detect the charge motion in each IDQD and the results are consistent with the simulation.
  • Keywords
    "Quantum dots","Silicon","Single electron transistors","Logic gates","Stability analysis","Current measurement","Scanning electron microscopy"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348580
  • Filename
    7348580
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706343