DocumentCode :
3706344
Title :
A single-molecule transistor in silicon
Author :
M. Fernando Gonzalez-Zalba;André Saraiva;Maria J. Calderón;Dominik Heiss;Belita Koiller;Andrew J. Ferguson
Author_Institution :
Cavendish Laboratory, University of Cambridge, Cambridge, UK
fYear :
2014
fDate :
6/1/2014 12:00:00 AM
Firstpage :
1
Lastpage :
1
Abstract :
We present a combined experimental-theoretical demonstration of electrical transport through a single diatomic donor molecule in the channel of a silicon nanotransistor. We demonstrate a simultaneous enhancement of the binding and charging energies with respect to the single donor case. Such enhancement suggests a novel physical mechanism to increase the operation temperature of conventional single-atom transistors and improve their robustness against interfacial electric fields.
Keywords :
"Silicon","Transistors","Nanoscale devices","Impurities","Performance evaluation","Quantum computing","Yttrium"
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
Type :
conf
DOI :
10.1109/SNW.2014.7348581
Filename :
7348581
Link To Document :
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