• DocumentCode
    3706351
  • Title

    Improvement in reliability characteristics (retention and endurance) of RRAM by using high-pressure hydrogen annealing

  • Author

    Jeonghwan Song;Daeseok Lee;Jiyong Woo;Euijun Cha;Sangheon Lee;Jaesung Park;Kibong Moon;Yunmo Koo;Amit Prakash;Hyunsang Hwang

  • Author_Institution
    Dept. of Mat. Sci. and Eng., Pohang University of Science and Technology (POSTECH), Pohang, Korea
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Reliability characteristics (retention and endurance) of RRAM are critical for its practical realization and need to be improved. In this work, we confirmed the trade-off between retention and endurance by using various top electrode thickness conditions. To improve both retention and endurance characteristics, we proposed a new method by using high-pressure hydrogen annealing. Finally, we obtained both improved retention and endurance characteristics in HfOX based RRAM devices after high-pressure hydrogen annealing treatment.
  • Keywords
    "Hafnium compounds","Switches","Hydrogen","Reliability","Annealing","Electrodes","Fabrication"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348588
  • Filename
    7348588
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706351