Title :
Statistical modeling of ultra-scaled donor-based silicon phosphorus devices
Author :
Yui-Hong Matthias Tan;Hoon Ryu;Bent Weber;Sunhee Lee;Rajib Rahman;Lloyd C. L. Hollenberg;Michelle Y. Simmons;Gerhard Klimeck
Author_Institution :
Network for Computational Nanotechnology, Purdue University, West Lafayette, IN 47907, USA
fDate :
6/1/2014 12:00:00 AM
Abstract :
Donor-based silicon phosphorus devices are regarded as promising candidates for quantum computing architectures. The precise number of donors in an ultra-scaled silicon phosphorus double donor-dot device [1] is determined via comparison of theoretically modeled binding energy confidence bands with experimental charge stability diagram measurements. High fidelity of modeling results are enabled through a comprehensive analysis of atomistic dopant placement fluctuations.
Keywords :
"Silicon","Phosphorus","Semiconductor process modeling","Computational modeling","Quantum computing","Atomic measurements","Physics"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348589
