Title :
Recovery and parmanent components of |Vth| shifts in pFETs by high-voltage on-state stress
Author :
Nurul Ezaila Alias;Tomoko Mizutani;Anil Kumar;Takuya Saraya;Toshiro Hiramoto
Author_Institution :
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
fDate :
6/1/2014 12:00:00 AM
Abstract :
Recovery of |Vth| shifts in pFETs after high voltage ON-state stress is systematically measured at various stress time and stress voltage. It is newly found that, while the |Vth| shifts are almost fully recovered after “mild” NBTI stress, the permanent |Vth| can be obtained by short-time and high-voltage ON-state stress.
Keywords :
"Stress","Stress measurement","Time measurement","Voltage measurement","SRAM cells","Very large scale integration","Silicon"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348591
