• DocumentCode
    3706354
  • Title

    Recovery and parmanent components of |Vth| shifts in pFETs by high-voltage on-state stress

  • Author

    Nurul Ezaila Alias;Tomoko Mizutani;Anil Kumar;Takuya Saraya;Toshiro Hiramoto

  • Author_Institution
    Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Recovery of |Vth| shifts in pFETs after high voltage ON-state stress is systematically measured at various stress time and stress voltage. It is newly found that, while the |Vth| shifts are almost fully recovered after “mild” NBTI stress, the permanent |Vth| can be obtained by short-time and high-voltage ON-state stress.
  • Keywords
    "Stress","Stress measurement","Time measurement","Voltage measurement","SRAM cells","Very large scale integration","Silicon"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348591
  • Filename
    7348591
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706354