• DocumentCode
    3706359
  • Title

    Novel BEOL InGaZnO R-load-type logic-gate technology

  • Author

    Chin-Wen Chan;Horng-Chih Lin;Tiao-Yuan Huang

  • Author_Institution
    Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    N-channel InGaZnO (IGZO) inverters with a resistor-load were fabricated with film-profile engineering (FPE). In this scheme the profiles of the deposition films contained in the device are tailored to adjust its operation characteristics. The fabricated drive thin-film transistors (TFTs) show steep subthreshold swing (88 mV/dec) and high on/off current ratio (>108). Functional operation of the inverters is demonstrated with this simple scheme.
  • Keywords
    "Inverters","Thin film transistors","Resistors","Logic gates","Films","Bridge circuits","Very large scale integration"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348596
  • Filename
    7348596
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706359