Title :
Simple design guideline for negative capacitnace FET using ferroelectric materials
Author :
Duckseoung Kang;Kyunghwan Lee;Shigenobu Maeda;Hyungcheol Shin
Author_Institution :
Inter-university Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Gwanak-ro, Gwanak-gu, Seoul 151-742, Republic of Korea
fDate :
6/1/2014 12:00:00 AM
Abstract :
This paper provides the simple design guideline of negative capacitance FET (NCFET). By considering average slope in polarization of a ferroelectric (FE) material according to electric field, simple design guideline was suggested to find the optimal thickness of FE material in NCFET where SS becomes 60 mV/dec. As the thickness of FE material increases, subthreshold swing (SS) becomes improved until limit condition occurs.
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348597
