• DocumentCode
    3706366
  • Title

    Switching and conduction mechanism of Cu/Si3N4/Si RRAM with CMOS compatibility

  • Author

    Sungjun Kim;Sunghun Jung;Min-Hwi Kim;Seongjae Cho;Jong-Ho Lee;Byung-Gook Park

  • Author_Institution
    Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-742, Republic of Korea
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, we fabricated CMOS compatible Cu/Si3N4/Si RRAM, showing good resistive switching. This memory cell is stable for bipolar switching (BS) than unipolar switching (US). Trap-controlled space charge limited current (SCLC) conduction is observed. Low resistance state (LRS) shows semiconducting behavior according to the temperature dependency.
  • Keywords
    "Switches","Silicon","CMOS integrated circuits","Electric breakdown","Switching circuits","Resistance"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348603
  • Filename
    7348603
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706366