Title :
Switching and conduction mechanism of Cu/Si3N4/Si RRAM with CMOS compatibility
Author :
Sungjun Kim;Sunghun Jung;Min-Hwi Kim;Seongjae Cho;Jong-Ho Lee;Byung-Gook Park
Author_Institution :
Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-742, Republic of Korea
fDate :
6/1/2014 12:00:00 AM
Abstract :
In this work, we fabricated CMOS compatible Cu/Si3N4/Si RRAM, showing good resistive switching. This memory cell is stable for bipolar switching (BS) than unipolar switching (US). Trap-controlled space charge limited current (SCLC) conduction is observed. Low resistance state (LRS) shows semiconducting behavior according to the temperature dependency.
Keywords :
"Switches","Silicon","CMOS integrated circuits","Electric breakdown","Switching circuits","Resistance"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348603
