TaOx-based ReRAM stack with NbOx-based selector for 3D cross-point ReRAM application

To achieve a high-density integration of non-volatile memory, NbO_x selector-cell prepared by a sputtering process is developed for cross-point 3D-ReRAM. By optimizing sputtering conditions, NbO_x film with a threshold voltage of ±0.5V is obtained as a bidirectional selector. Furthermore, ReRAM with a stack of NbO_x selector-cells is confirmed to have a good switching property at the threshold voltage of ±0.5V.