• DocumentCode
    3706367
  • Title

    TaOx-based ReRAM stack with NbOx-based selector for 3D cross-point ReRAM application

  • Author

    Natsuki Fukuda;Yutaka Nishioka;Koukou Suu

  • Author_Institution
    Institute of Semiconductor and Electronics Technologies, ULVAC, Inc., 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    To achieve a high-density integration of non-volatile memory, NbOx selector-cell prepared by a sputtering process is developed for cross-point 3D-ReRAM. By optimizing sputtering conditions, NbOx film with a threshold voltage of ±0.5V is obtained as a bidirectional selector. Furthermore, ReRAM with a stack of NbOx selector-cells is confirmed to have a good switching property at the threshold voltage of ±0.5V.
  • Keywords
    "Films","Sputtering","Threshold voltage","Switches","Voltage measurement","Oxygen","Conductivity"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348604
  • Filename
    7348604
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706367