Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors

The push for transistors with low standby power, marked by a sub-threshold swing (SS) less than 60mV/dec, has led to the investigation of exotic materials and novel mechanisms for FETs. Atomi-cally thin MoS₂ has unique features which make it good candidate for future integrated circuits: having small body thickness and high mobility at the same time [1]. Bi-layer MoS₂ is particularly interesting as its band gap can be tuned dynamically with an external field. This work investigates possible ways of lowering SS of the bi-layer MoS₂ transistors such as using band-to-band-tunneling (BTBT) and dynamic band gap (DBG) tuning.