• DocumentCode
    3706371
  • Title

    Impact of line edge roughness on RTN in SRAM cells with 70 Å nanowire FET

  • Author

    Dogyun Son;Duckseoung Kang;Sungwon Yoo;Youngsoo Seo;Hyungcheol Shin

  • Author_Institution
    Inter university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, we investigate the impact of line edge roughness (LER) combined with random telegraph noise (RTN) induced by carrier trapping on threshold voltage and stability of SRAM cells with 70 Å nanowire FETs. It is found that LER combined with RTN boosts VT fluctuation more than the case with the single noise source. Its effect can limit aggressive scaling seriously.
  • Keywords
    "SRAM cells","Field effect transistors","Fluctuations","Logic gates","Semiconductor process modeling","Degradation","Electron traps"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348608
  • Filename
    7348608
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706371