Title :
Novel tri-state latch using single-peak negative differential resistance devices
Author :
Sunhae Shin;Kyung Rok Kim
Author_Institution :
Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, South Korea
fDate :
6/1/2014 12:00:00 AM
Abstract :
We propose a novel tri-state latch based on single-peak MOS-NDR. By shifting peak voltage over half of the supply voltage, tri-state memory can be implemented. The fully suppressed valley current of MOS-NDR guarantees the supply voltage design margin in tri-state logic and memory.
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348610
