Title :
Resistive switching characteristics in HfOx memory devices embedded with Pd nanocrystals
Author :
Tsung-Kuei Kang;Chi-Chih Tsao;Wei-Len Chen
Author_Institution :
Department of Electronic Engineering, Feng-Chia University, Taichung, Taiwan, R.O.C.
fDate :
6/1/2014 12:00:00 AM
Abstract :
The electrical characteristics of the resistive switching memory with Pd nanocrystals (NCs) are investigated. The memories with Pd NCs embedded in different places of HfOx film are fabricated. Compared with all structures, the devices with Pd NCs embedded in the middle of HfOx film show best electrical characteristics. It is found that the electrical characteristics are closely related to the forming process, including set voltage and conductive current.
Keywords :
"Hafnium compounds","Switches","Films","Yttrium","Nanocrystals","Resistance"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348611
