Title :
Orientation and size effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires
Author :
Hajime Tanaka;Seigo Mori;Naoya Morioka;Jun Suda;Tsunenobu Kimoto
Author_Institution :
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
fDate :
6/1/2014 12:00:00 AM
Abstract :
The phonon-limited hole mobility in rectangular cross-sectional [001], [110], [111], and [112]-oriented germanium nanowires was calculated and the hole transport characteristics were compared. The calculation revealed that [110] germanium nanowires with larger height along [001] show high hole mobility and are favorable for p-channel FETs.
Keywords :
"Nanowires","Geometry","Effective mass","Germanium","Mathematical model","Electron devices","Charge carrier processes"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348616
