Anomalous electrostatics and intrinsic variability in GeOI p-MOSFET

We have reported anomalous electrostatic behaviors in drain-induced-barrier-lowering (DIBL), threshold voltage (V_T) roll-off, subthreshold swing (SS), and intrinsic V_T variability in GeOI p-MOSFET. The underlying mechanism responsible for these anomalous electrostatic characteristics is attributed to the valence-band offset between Ge channel and Si substrate due to their significant discrepancy in bandgap. This band offset results in an effective built-in forward body bias in GeOI pFET, and leads to different carrier profiles between GeOI pFET and nFET.