• DocumentCode
    3706382
  • Title

    Irradiation induced tunnel barrier in side-gated graphene nanoribbon

  • Author

    Shuojin Hang;Zakaria Moktadir;Hiroshi Mizuta

  • Author_Institution
    Faculty of Physical Sciences and Engineering, University of Southampton, UK
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We investigated a method of forming tunnel barriers in monolayer graphene nanoribbon (GNR) using controlled ion irradiation. By using a helium ion microscope (HIM), we are able to reduce the width of exposure area down to 5nm. Source-drain conductance of side-gated GNR has been measured and the gate capacitances were extracted.
  • Keywords
    "Graphene","Logic gates","Radiation effects","Quantum dots","Strips","Temperature measurement","Electric potential"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348619
  • Filename
    7348619
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706382