Different scenarios for estimating coupling capacitances of through silicon via (TSV) arrays

This paper presents characterization for coupling capacitance in through silicon Vias (TSV) arrays. Two scenarios are proposed to estimate the coupling capacitance between TSVs in TSVs array. First scenario is by using a closed form expression that accounts for the shielding effect resulted by TSVs. Second scenario is based on the existence of initial measured capacitance value at certain dimensions, thereafter the capacitance values can be obtained at other dimensions using scaling equations.