Title :
A study of the states kinetics in NBTI degradation by two-stage NBTI model implementation
Author :
A. F. Muhammad Alimin;S. F. Wan Muhamad Hatta;N. Soin
Author_Institution :
Department of Electrical Engineering, University of Malaya, Kuala Lumpur, Malaysia
Abstract :
This paper presents a simulation framework for reliability analysis of PMOS devices in the TCAD Sentaurus environment. The degradation of parameter is based on the numerical solution for the two-stage NBTI model mechanism. We demonstrate and analyze the voltage degradation, Vth of a high-k HfO2 dielectric pMOSFET structure with effective oxide thickness (EOT) of 1.092 nm. After 1000s of stress, the threshold voltage shift of higher stress bias shows higher degradation (~0.07V) compared to the lower stress bias (~0.008V).
Keywords :
"Stress","Threshold voltage","Degradation","Reliability","Integrated circuit modeling","Charge carrier processes","Electron devices"
Conference_Titel :
Micro and Nanoelectronics (RSM), 2015 IEEE Regional Symposium on
DOI :
10.1109/RSM.2015.7354992