Towards high performance graphene nanoribbon transistors (GNR-FETs)

We fabricated trilayer graphene nanoribbon (GNR) Field Effect Transistors (FETs) by means of mechanical exfoliation method and investigate the characteristics of the device. The device shows ambipolar operation with a good Ohmic contact between the graphene and electrodes. Arrhenius plots of temperature dependence of conductance are consistence with thermal activated conduction above 273 K, and variable range hopping conduction at low temperature. GNR charge carrier provides high electron mobility of 6198 cm²V^-1s^-1 at 273 K, and lower activation energy of 0.592 meV. This device possesses high performance and requires ultra-low power compare to other reported graphene-based transistors.