Title :
High-voltage SiC devices: Diodes and MOSFETs
Author :
J. Mill?n;P. Friedrichs;A. Mihaila;V. Soler;J. Rebollo;V. Banu;P. Godignon
Author_Institution :
Institut de Micoelectr?nica de Barcelona, Centre Nacional de Microelectr?nica, IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Spain
Abstract :
This paper reviews recent achievements on high-voltage SiC-based devices aimed at Wind Power and Solid-State Transformer applications. SiC diodes with voltage ranges between 1.7kV and 9kV have been designed and fabricated. On the other hand, SiC JFETs and, specially, SiC MOSFETs are also under development, and preliminary prototypes of 3.3 kV SiC MOSFETs are reported.
Keywords :
"Silicon carbide","Schottky diodes","Silicon","PIN photodiodes","Rectifiers","Insulated gate bipolar transistors"
Conference_Titel :
Semiconductor Conference (CAS), 2015 International
Print_ISBN :
978-1-4799-8862-4
DOI :
10.1109/SMICND.2015.7355148
