DocumentCode
3710791
Title
A study to improve IGBT reliability in power electronics applications
Author
Vinoth Kumar Sundaramoorthy;Enea Bianda;Gernot J?rgen Riedel
Author_Institution
Corporate Research, ABB Switzerland Ltd, Segelhofstrasse 1K, 5405 Baden, Switzerland
fYear
2015
Firstpage
19
Lastpage
26
Abstract
Lifetime prediction of IGBT modules from their junction temperature is an important aspect to improve the reliability of power electronic systems. Here, methods to estimate the IGBT junction temperature from its electrical characteristics are discussed. A solution is also proposed to avoid explosion of IGBTs used in traction converters.
Keywords
"Temperature measurement","Insulated gate bipolar transistors","Time measurement","Semiconductor device measurement","Estimation","Voltage measurement","Logic gates"
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2015 International
ISSN
1545-827X
Print_ISBN
978-1-4799-8862-4
Type
conf
DOI
10.1109/SMICND.2015.7355149
Filename
7355149
Link To Document