• DocumentCode
    3710792
  • Title

    Nanowire junctionless silicon-on-insulator MOSFETs: Operation features and electrical characterization

  • Author

    A. N. Nazarov;T. E. Rudenko

  • Author_Institution
    V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
  • fYear
    2015
  • Firstpage
    27
  • Lastpage
    34
  • Abstract
    In this work we provide an overview of some features of operation junctionless MOSFETs, such as enhanced electron mobility in heavily doped narrow nanowire channels, steep subthreshold slope of such device associated with impact ionization process in the channel, and extraction of main electrical characteristics. Peculiar properties of random telegraph noise in junctionless MOSFET are reviewed separately.
  • Keywords
    "MOSFET","Impact ionization","Logic gates","Electron mobility","Silicon","Doping"
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2015 International
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4799-8862-4
  • Type

    conf

  • DOI
    10.1109/SMICND.2015.7355150
  • Filename
    7355150
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3710792