• DocumentCode
    3710813
  • Title

    Pressure sensors based on high frequency operating GaN FBARs

  • Author

    Ioana Giangu;George Stavrinidis;Alexandra Stefanescu;Antonis Stavrinidis;Adrian Dinescu;George Konstantinidis;Alexandru M?ller

  • Author_Institution
    IMT-Bucharest, 32B, (126A) Erou Iancu Nicolae street, 077190, Romania
  • fYear
    2015
  • Firstpage
    99
  • Lastpage
    102
  • Abstract
    In this paper, first experiments regarding characterization of the GaN based FBAR (Film Bulk Acoustic Resonator) structures as pressure sensors are presented. The FBAR structures have been manufactured on GaN/Si using advanced micromachining technologies. The experiments have demonstrated the excellent mechanical properties of 0.5 μm thin GaN membranes able to support a pressure of at least 5 Bar.
  • Keywords
    "Film bulk acoustic resonators","Resonant frequency","Gallium nitride","Temperature sensors","Pressure sensors","Temperature measurement","Silicon"
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2015 International
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4799-8862-4
  • Type

    conf

  • DOI
    10.1109/SMICND.2015.7355174
  • Filename
    7355174
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3710813