Title :
Pressure sensors based on high frequency operating GaN FBARs
Author :
Ioana Giangu;George Stavrinidis;Alexandra Stefanescu;Antonis Stavrinidis;Adrian Dinescu;George Konstantinidis;Alexandru M?ller
Author_Institution :
IMT-Bucharest, 32B, (126A) Erou Iancu Nicolae street, 077190, Romania
Abstract :
In this paper, first experiments regarding characterization of the GaN based FBAR (Film Bulk Acoustic Resonator) structures as pressure sensors are presented. The FBAR structures have been manufactured on GaN/Si using advanced micromachining technologies. The experiments have demonstrated the excellent mechanical properties of 0.5 μm thin GaN membranes able to support a pressure of at least 5 Bar.
Keywords :
"Film bulk acoustic resonators","Resonant frequency","Gallium nitride","Temperature sensors","Pressure sensors","Temperature measurement","Silicon"
Conference_Titel :
Semiconductor Conference (CAS), 2015 International
Print_ISBN :
978-1-4799-8862-4
DOI :
10.1109/SMICND.2015.7355174
