• DocumentCode
    3710830
  • Title

    A setup for very high temperature measurements of power semiconductors exceeding 500 ?C

  • Author

    Christian Unger;Manuela Mocanu;Michael Ebli;Martin Pfost

  • Author_Institution
    Robert Bosch Center for Power Electronics, Reutlingen University, Alteburgstr. 150, 72762, Germany
  • fYear
    2015
  • Firstpage
    149
  • Lastpage
    152
  • Abstract
    This paper presents a measurement setup and an assembly technique suitable for characterization of power semiconductor devices under very high temperature conditions exceeding 500 °C. An important application of this is the experimental investigation of wide bandgap semiconductors. Measurement results are shown for a 1200V SiC MOSFET and a 650V depletion mode GaN HEMT.
  • Keywords
    "Temperature measurement","Semiconductor device measurement","Temperature sensors","Temperature distribution","Heating","Current measurement","Gallium nitride"
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2015 International
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4799-8862-4
  • Type

    conf

  • DOI
    10.1109/SMICND.2015.7355191
  • Filename
    7355191
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3710830