Title :
Reliability characterization of power devices which operate under power cycling
Author :
Dan Simon;Cristian Boianceanu;Gilbert De Mey;Vasile ?opa
Author_Institution :
Infineon Technologies Romania, ATV PTP TM, 020335 Bucharest, Romania
Abstract :
The safe-operating-area (SOA) of automotive DMOS transistors, which are operated repeatedly under high power pulses (power cycling), is lower than the classical single-pulse SOA and it is dependent on the geometry of the transistor. In this paper, we present a test system for reliability characterization of power devices, of various geometries, which operate under power cycling conditions.
Keywords :
"Temperature measurement","Transistors","Temperature sensors","Metals","Reliability","Temperature distribution","Stress"
Conference_Titel :
Semiconductor Conference (CAS), 2015 International
Print_ISBN :
978-1-4799-8862-4
DOI :
10.1109/SMICND.2015.7355192
