DocumentCode :
3710862
Title :
SiO2/4H-SiC interface states reduction by POCl3 post-oxidation annealing
Author :
Razvan Pascu;Florea Craciunoiu;Mihaela Kusko;Mihai Mihaila;Gheorghe Pristavu;Marian Badila;Gheorghe Brezeanu
Author_Institution :
National Institute for R&D in Microtechnology, IMT- Bucharest, Romania
fYear :
2015
Firstpage :
255
Lastpage :
258
Abstract :
Interface state density (Dit) at SiO2/4H-SiC interfaces is investigated using capacitance-voltage (C-V) characterization. Two different measurement methods for Dit determination (both C-V at different temperatures in the range of 80-300K and high frequency (HF) vs quasi static (QS) characteristics) have been used. A significant reduction of Dit is observed, almost one order of magnitude, after a post oxidation annealing (POA) in POCl3 ambient, compared to as-grown dry oxidized sample.
Keywords :
"Silicon carbide","Temperature measurement","Temperature","Capacitance-voltage characteristics","Annealing","Capacitors","Hafnium"
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2015 International
ISSN :
1545-827X
Print_ISBN :
978-1-4799-8862-4
Type :
conf
DOI :
10.1109/SMICND.2015.7355225
Filename :
7355225
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3710862
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