• DocumentCode
    3710862
  • Title

    SiO2/4H-SiC interface states reduction by POCl3 post-oxidation annealing

  • Author

    Razvan Pascu;Florea Craciunoiu;Mihaela Kusko;Mihai Mihaila;Gheorghe Pristavu;Marian Badila;Gheorghe Brezeanu

  • Author_Institution
    National Institute for R&D in Microtechnology, IMT- Bucharest, Romania
  • fYear
    2015
  • Firstpage
    255
  • Lastpage
    258
  • Abstract
    Interface state density (Dit) at SiO2/4H-SiC interfaces is investigated using capacitance-voltage (C-V) characterization. Two different measurement methods for Dit determination (both C-V at different temperatures in the range of 80-300K and high frequency (HF) vs quasi static (QS) characteristics) have been used. A significant reduction of Dit is observed, almost one order of magnitude, after a post oxidation annealing (POA) in POCl3 ambient, compared to as-grown dry oxidized sample.
  • Keywords
    "Silicon carbide","Temperature measurement","Temperature","Capacitance-voltage characteristics","Annealing","Capacitors","Hafnium"
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2015 International
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4799-8862-4
  • Type

    conf

  • DOI
    10.1109/SMICND.2015.7355225
  • Filename
    7355225
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3710862