LDD structure influence on n-MOSFET parameters

In this paper, we present the implications that the Lightly Doped Drain-LDD technique used for Metal Oxide Semiconductor-MOS fabrication of n-channel transistor has on different device parameters. The discussion focuses on the influence of the n- doping of drain, respectively source on the electric field, one of the most important issues of today´s technology, but takes also into consideration another aspects such as the impact of LDD on series resistance of the device and channel length contribution on breakdown voltage reduction when considering drain/source light doping.