Title :
960mV open circuit voltage chalcopyrite solar cell
Author :
Homare Hiroi;Yasuaki Iwata;Kyouhei Horiguchi;Shunsuke Adachi;Noriyuki Sakai;Hiroki Sugimoto
Author_Institution :
Technology Development Division, Atsugi Research Center, Solar Frontier K.K., 123-1 Shimokawairi, Kanagawa 243-0206, Japan
fDate :
6/1/2015 12:00:00 AM
Abstract :
Open circuit voltage of 960mV on chalcopyrite solar cell was achieved by pure-sulfide CuInGaS2 solar cell. Generally, high performance CuInGaS2 needs KCN-etching treatment to remove CuS layer, however, we could fabricate it without KCN-etching treatment. Additionally, Cd-free buffer layer was applied for current density improvement and the champion cell demonstrated over 14% efficiency. In this paper, the latest results for high performance pure-sulfide CuInGaS2 cells will be presented.
Keywords :
"Indexes","Europe"
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
DOI :
10.1109/PVSC.2015.7355655
