DocumentCode :
3710965
Title :
Triple-functional n-type microcrystalline silicon oxide layers in hydrogenated amorphous silicon/microcrystalline silicon tandem solar cells
Author :
Jia Fang; Lisha Bai; Guofu Hou; Xinliang Chen; Changchun Wei; Guangcai Wang; Jian Sun; Dekun Zhang; Ying Zhao; Xiaodan Zhang
Author_Institution :
Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Photo-electronic Thin Film Devices and Technology, Tianjin 300071, China
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
3
Abstract :
A novel tunnel recombination junction (TRJ) consisted of n type hydrogenated microcrystalline silicon oxide (n-μc-SiOx:H) layer and p type hydrogenated nanocrystalline silicon oxide (p-nc-SiOx:H) layer was proposed in hydrogenated amorphous silicon/microcrystalline silicon (a-Si:H/μc-Si:H) tandem solar cell. The absence of n-μc-Si:H compared to conventional n-μc-SiOx:H/n-μc-Si:H/p-nc-SiOx:H TRJ reduced parasitic absorption. Meanwhile, the new TRJ indicated an ohmic contact, which is suitable for the tandem solar cell. The application of the new TRJ significantly improved the short-circuit current (Jsc) of bottom cell. Moreover, n-μc-SiOx:H layer functioned as intermediate reflector layer to ensure high Jsc of top cell. Initial conversion efficiency of optimized a-Si:H/μc-Si:H tandem solar cell with novel TRJ based on as-grown MOCVDZnO: B (BZO) substrate reached up to 12.99%.
Keywords :
"Photovoltaic cells","Silicon","Absorption","Optical reflection","Conductivity","Optical films"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type :
conf
DOI :
10.1109/PVSC.2015.7355681
Filename :
7355681
Link To Document :
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