Spatial characterization of interstitial oxygen and its related defects in Czochralski silicon wafers and ingots: A way to improve the material and device quality

In this paper a new characterization technique, the OXYMAP technology, allowing measurement of the interstitial oxygen concentration and the oxygen related defects in Czochralski grown silicon, is presented. We applied this technique to 8 inch industrial-like p-type ingots. Relevant information regarding the material quality (compositional and electrical properties) were extracted, and we demonstrated the ability of the developed technic to predict the impact of harmful oxygen-related defects on the solar cells performances.