DocumentCode :
3711016
Title :
Role of halide anion on exciton binding energy and disorder in hybrid perovskite semiconductors
Author :
Aravindh Kumar;Naresh K. Kumawat;Parul Maheshwari;Dinesh Kabra
Author_Institution :
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, (India), Pin- 400076
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
4
Abstract :
We present a simplistic approach to determine the electronic-bandgap (Eg) and the exciton binding energy (Ex) of hybrid perovskite (ABX3 where, A= CH3NH3+, B = Pb2+, X = Cl, Br or I ion) semiconductor film. In this study, we show the role of the halide anion (X-) on Eg and Ex using a simple room temperature UV-Vis absorption spectrum measurements and model our results using Elliot´s theory of Wannier exciton model to determine the Eg and Ex. We also found that the disorder primarily arises from structure and not composition disorder. This is just a consequence of the fact the Urbach tail, which is a measure of disorder is reasonably independent of the halide anion among three perovskite films.
Keywords :
"Absorption","Excitons","Photonic band gap","Optical films","Substrates","Semiconductor device modeling"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type :
conf
DOI :
10.1109/PVSC.2015.7355732
Filename :
7355732
Link To Document :
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