• DocumentCode
    3711016
  • Title

    Role of halide anion on exciton binding energy and disorder in hybrid perovskite semiconductors

  • Author

    Aravindh Kumar;Naresh K. Kumawat;Parul Maheshwari;Dinesh Kabra

  • Author_Institution
    Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, (India), Pin- 400076
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We present a simplistic approach to determine the electronic-bandgap (Eg) and the exciton binding energy (Ex) of hybrid perovskite (ABX3 where, A= CH3NH3+, B = Pb2+, X = Cl, Br or I ion) semiconductor film. In this study, we show the role of the halide anion (X-) on Eg and Ex using a simple room temperature UV-Vis absorption spectrum measurements and model our results using Elliot´s theory of Wannier exciton model to determine the Eg and Ex. We also found that the disorder primarily arises from structure and not composition disorder. This is just a consequence of the fact the Urbach tail, which is a measure of disorder is reasonably independent of the halide anion among three perovskite films.
  • Keywords
    "Absorption","Excitons","Photonic band gap","Optical films","Substrates","Semiconductor device modeling"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7355732
  • Filename
    7355732