Title :
19.1 % laser-doped selective emitter P-type multi-crystalline UMG silicon solar cell
Author :
Pei Hsuan Doris Lu;Brett Hallam;Catherine Chan;Alison Wenham;Malcolm Abbott;Daniel Chen; Moon Yong Kim;Ly Mai;SiSi Wang;Nino Borojevic;Chee Mun Chong;Stuart Wenham
Author_Institution :
The University of New South Wales, Sydney, SPREE TETB 2052, Australia
fDate :
6/1/2015 12:00:00 AM
Abstract :
In this paper standard screen printed solar cells and laser-doped selective emitter solar cells are fabricated on p-type multi-crystalline silicon wafers from three upgraded-metallurgical grade feedstock suppliers. A cell efficiency of UMG material is demonstrated above 17 % using standard screen printing technology and a full area aluminum back surface field. By employing a laser-doped selective emitter and self-aligned light-induced plated contacts, a 1-2 % absolute increase in cell efficiency is obtained with a peak efficiency of 19.1 %, when still employing a full area aluminum-back surface field.
Keywords :
"Silicon","Photovoltaic cells","Passivation","Annealing","Hydrogen","Standards"
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
DOI :
10.1109/PVSC.2015.7355746