DocumentCode :
3711081
Title :
Process variability in Cu2ZnSnSe4 solar cell devices: Electrical and structural investigations
Author :
Guy Brammertz;Marie Buffi?re;Christophe Verbist;Souhaib Oueslati;Jonas Bekaert;Hossam ElAnzeery;Khaled Ben Messaoud;Sylvester Sahayaraj;Maria Batuk;Joke Hadermann;Christine K?ble;Marc Meuris;Jozef Poortmans
Author_Institution :
imec division IMOMEC - partner in Solliance, Wetenschapspark 1, 3590 Diepenbeek, Belgium
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
4
Abstract :
We have fabricated 9.7% efficient Cu2ZnSnSe4/CdS/ZnO solar cells by H2Se selenization of sequentially sputtered metal layers. Despite the good efficiency obtained, process control appears to be difficult. In the present contribution we compare the electrical and physical properties of two devices with nominal same fabrication procedure, but 1% and 9.7% power conversion efficiency respectively. We identify the problem of the lower performing device to be the segregation of ZnSe phases at the backside of the sample. This ZnSe seems to be the reason for the strong bias dependent photocurrent observed in the lower performing devices, as it adds a potential barrier for carrier collection. The reason for the different behavior of the two nominally same devices is not fully understood, but speculated to be related to sputtering variability.
Keywords :
"Photovoltaic cells","II-VI semiconductor materials","Photoconductivity","Power conversion","Zinc compounds","Sputtering","Performance evaluation"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type :
conf
DOI :
10.1109/PVSC.2015.7355797
Filename :
7355797
Link To Document :
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