DocumentCode :
3711092
Title :
Modified Shockley-Queisser limit for quantum dot solar cells
Author :
Tian Li;Mario Dagenais
Author_Institution :
Department of Electrical and Computer Engineering, University of Maryland, College Park, 20742, United States
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
4
Abstract :
We discuss the fundamental limits affecting the conversion efficiency of quantum dot solar cells. We demonstrate using a modified detailed balance analysis that the existence of an extended tailing density of states fundamentally enhance the dark saturation current density and lead to a degradation of the open circuit voltage. We predict how the open circuit voltage (Voc) changes with the tail width and find agreement with the general trend observed experimentally. In practice, the existence of non-radiative recombination would further reduce Voc.
Keywords :
"Gallium arsenide","Standards","Predictive models","Absorption"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type :
conf
DOI :
10.1109/PVSC.2015.7355808
Filename :
7355808
Link To Document :
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