Title :
The CdS/CdTe solar cells with reactively sputtered a-MoOx/Mo back contact
Author :
Victor Rej?n;R. Mis-Fern?ndez;E. Hern?ndez-Rodr?guez;I. Riech;Juan Luis Pe?a
Author_Institution :
Applied Physics Department, CINVESTAV-IPN, M?rida, C.P. 97310, Yucat?n, M?xico
fDate :
6/1/2015 12:00:00 AM
Abstract :
In this work amorphous MoOx thin film was used as buffer layer at back contact of CdS/CdTe solar cell. The a-MoOx thin film was made by reactive rf-sputtering from a Mo target. From DRX analysis of MoOx/glass thin film, both α-MoO3 and β-MoO3 phases were identified. The CdTe film was grown by conventional CSS technique. The cells were activated by annealing at 400 °C in Argon-Oxygen-CHClF2 atmosphere. The curves of J-V and its efficiency vs. temperature of the solar cells were obtained. The solar cell efficiency at room temperature was around 11.2%. The temperature coefficient of the efficiency was 0.014%/°C in range of 40-65 °C.
Keywords :
"Annealing","Photovoltaic cells","Sputtering"
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
DOI :
10.1109/PVSC.2015.7355891