DocumentCode :
3711178
Title :
Chemical and mechanical techniques enabling direct characterization of the CdS/CdTe heterojunction region in completed devices
Author :
D.M. Meysing;M.O. Reese;H. P. Mahabaduge;W.K. Metzger;J.M. Burst;J.N. Duenow;T.M. Barnes;C.A. Wolden
Author_Institution :
Colorado School of Mines, Golden, 80401, United States of America
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
6
Abstract :
The composition and structure of the CdS/CdTe heterojunction is critical to device performance. However, it is difficult to access this region in devices employing the conventional superstrate configuration. In this work, we report on the development of two techniques for exposing the CdS window layer in completed CdTe solar cells. First, we report on a chemical etch that selectively removes CdTe and exposes the CdS back surface. In addition, we demonstrate a thermo-mechanical lift-off technique that allows clean separation at the TCO/CdS interface. These techniques enable simple, quick sample preparation for characterization of the heterojunction region of completed devices.
Keywords :
"II-VI semiconductor materials","Cadmium compounds","Gold","Chemicals","Glass","Tin"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type :
conf
DOI :
10.1109/PVSC.2015.7355895
Filename :
7355895
Link To Document :
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