Fabrication and characterization of BaSi2 films on Ge(111) substrates by molecular beam epitaxy

We grow BaSi₂ films on Ge(111) substrates using various templates. First, we form 30 nm BaGe₂ templates by deposition of Ba on hot Ge, followed by molecular beam epitaxy (MBE) at 580 °e to form BaSi₂. We succeed to grow a-axis-oriented BaSi₂; however BaSi₂ is not a continuous film, and hence BaSi₂ is easily oxidized after exposed to air. Next, we grow 3 nm BaSi₂ template by solid phase epitaxy (SPE) with initial crystal nuclei BaSi₂ at 580 °C, followed by MBE at 580°C. As a result, we achieved highly [100]-oriented BaSi₂ continuous films.