• DocumentCode
    3711253
  • Title

    Intermediate band solar cell design using InAs quantum dots in AlAsSb cladding

  • Author

    Seth M. Hubbard;Staffan Hellstroem;Zachary S. Bittner;Ramesh B. Laghumavarapu;Diana Huffaker

  • Author_Institution
    NanoPower Research Labs, Rochester Institute of Technology, NY, USA
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We present simulations of InAs QDs embedded in AlAsSb, which may be a promising candidate system for realizing intermediate band solar cells as it features bandgaps close to the ideal and a nearly flat type-II valence band lineup. We have also experimentally investigated InAs quantum dots (QDs) grown in an AlAs0.56Sb0.44 matrix in the unintentionally doped (uid) region of an In0.52Al0.48As solar cell. Optical and electrical properties of the solar cell were investigated to evaluate the possibility of photon assisted absorption from the QD states. As well, potential designs for a AlAs0.56Sb0.44 heterojunction QD solar cell were evaluated.
  • Keywords
    "Photonic band gap","Photovoltaic cells","Indium compounds","Quantum dots","Absorption","Heterojunctions","Photonics"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7355971
  • Filename
    7355971
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711253