• DocumentCode
    3711301
  • Title

    Analysis of alloying and built-in voltage in thin film chalcogenide solar cells using modulation spectroscopy

  • Author

    Alan E. Delahoy;Zimeng Cheng;Jingong Pan;Shou Peng;Ken K. Chin

  • Author_Institution
    CNBM New Energy Materials Research Center, Physics Department New Jersey Institute of Technology, Newark, 07102, USA
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Modulation spectroscopy has been performed on superstrate CdS/CdTe solar cells prepared by close-spaced sublimation. Photoreflectance (PR) measurements were conducted near the CdTe E0 band edge using a variable-wavelength probe beam in conjunction with a chopped pump beam. A fit to the observed PR spectrum was made using two third-derivative, low-field lineshapes. The band gap of the active material near the junction is 1.46 eV (CdTe1-xSx). The envelope function varied as 1 - V/Vbi· The PR spectrum shifted with a temperature coefficient of -0.31 meV/K. Photoreflectance spectroscopy offers a powerful method of determining absorber band gaps, alloying, and built-in voltage in thin-film solar cells.
  • Keywords
    "Integrated optics","Optical modulation","Optical pumping","Optical reflection","Heating","Gallium arsenide"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356019
  • Filename
    7356019