• DocumentCode
    3711304
  • Title

    Study of recombination in CdMgTe/CdTeSe heterostructures using photoluminescence intensity and lifetime measurements with confocal photoluminescence microscopy

  • Author

    C.H. Swartz;M. Edirisooriya;O.S. Ogedengbe;B.L. Hancock;S. Sohal;E.G LeBlanc;P.A.R.D. Jayathilaka;O.C. Noriega;M. Holtz;T.H. Myers;K.N. Zaunbrecher

  • Author_Institution
    Materials Science, Engineering, & Commercialization Program, Texas State University, San Marcos, 78666, USA
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Intensity-resolved and time-resolved PL are shown to be powerful tools for analyzing recombination in epitaxial CdTe appropriate for photovoltaic applications. Non-radiative defects such as dislocations are easily mapped and quantified by confocal photoluminescence. Very low dislocation density and twin content, as well as very high luminescence efficiency and measured lifetime (450 ns), can be achieved by Se-alloying to lattice match CdTeSe to InSb substrates. Analysis suggests the bulk lifetime for epitaxial CdTeSe is in excess of 700 ns.
  • Keywords
    "II-VI semiconductor materials","Cadmium compounds","Radiative recombination","Photoluminescence","DH-HEMTs","Substrates"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356022
  • Filename
    7356022
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711304