Title :
Double-heterojunction crystalline silicon solar cell with electron-selective TiO2 cathode contact fabricated at 100?C with open-circuit voltage of 640 mV
Author :
Janam Jhaveri;Ken A. Nagamatsu;Alexander H. Berg;Gabriel Man;Girija Sahasrabudhe;Sigurd Wagner;Jeffrey Schwartz;Antoine Kahn;James C. Sturm
Author_Institution :
Princeton Institute for the Science and Technology of Materials (PRISM), Princeton, NJ, 08544, USA
fDate :
6/1/2015 12:00:00 AM
Abstract :
A double-heterojunction c-Si solar cell was fabricated at maximum process temperature of 100°C. We demonstrate an electron-selective passivated contact to Si using TiO2, which increased the open-circuit voltage by 45 mV compared to a device with a direct metal to n-type substrate contact. In the fabricated structure, PEDOT/Si replaced the front-side p-n junction of conventional Si-based solar cells while the Si/TiO2 interface is formed on the back-side. Compared to previous work [1], the Voc has increased from 620 to 640 mV while maintaining a maximum process temperature of 100°C. Critical to the improved performance is better passivation of the Si/TiO2 interface. The increase in Voc can be attributed to an interface recombination velocity of ~75 cm/s, which is consistent with photoconductance decay measurements.
Keywords :
"Silicon","Photovoltaic cells","Spontaneous emission","Annealing","Heterojunctions","Dark current","Temperature measurement"
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
DOI :
10.1109/PVSC.2015.7356054