• DocumentCode
    3711336
  • Title

    Relevance Of TCO workfunction in n-silicon oxide emitter - c-Si (p) heterojunction solar cell

  • Author

    M. Izzi;L. Serenelli;P. Mangiapane;E. Salza;M. Tucci;M. Delia Noce;I. Usatii;E. Bobeico;L.V. Mercaldo;L. Lancellotti;P. Delli Veneri;D. Caputo;G. de Cesare

  • Author_Institution
    ENEA Casaccia Research Centre Rome, ITALY
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The amorphous /crystalline silicon heterojunction solar cells have largely demonstrated their usefulness to reach high efficiency. We have adopted a different and wider bandgap emitter based on silicon oxide, n-SiOx. A central role in this type of structure is played from the TCO workfunction whose value affects strongly the heterojunction´s band structure at the emitter interface. RF magnetron sputtered TCO obtained with different deposition parameters, have been made in order to optimize their use in our heterojunction solar cell. Numerical simulation on the SiOx HJ, with TCO having proper workfunction value, show potential efficiency conversion well over the 23%. New Roman Bold font. An example is shown next.
  • Keywords
    "Heterojunctions","Photovoltaic cells","Optical variables measurement","Biomedical optical imaging","Thickness measurement","Frequency measurement","Silicon"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356055
  • Filename
    7356055