Lowly doped emitters for crystalline silicon solar cells

High efficiency silicon solar cells are related to low recombination currents and high open-circuit voltages. The emitter is characterized by the impurity concentration profile. The usual parameters for this purpose are sheet resistance (Rs), surface impurity concentration (Ns) and depth junction. In order to obtain high quality emitter, we look for reduce Joe values, lowly doped emitters with low Ns and Rs values and deep depth junctions. A wet oxidation step is incorporated to minimize the dead layer and the peak surface concentration. Our work has developed a process resulting in ~ 0.8 × 1020 cm-3 and 60 Ω/□.